Chuantong CHEN 教授 日本大阪大学
Chuantong Chen, received the master's degree and Ph.D degree in mechanical engineering from Nagoya Institute of Technology, Japan, in 2012 and 2015, separately. From 2016 to 2019, he was an assistant professor at Institute Scientific and Industrial Research, Osaka University, Japan. He became to an associate professor in Osaka University from 2020. His research interest includes lead-free soldering, Ag sinter joining, Nano-joining, 3D packaging, and power electronics packaging. Prof. Chen was a recipient of some awards and honors including the IEEE ICEP Outstanding Technical paper Award in 2023, and the IEEE CPMT Japan Chapter Young in 2019. He has published including IEEE T Power Electr, Acta Mater, Scripta Mater, Appl Phys Lett, more than 100 journal papers and about 70 conference papers in above fields. He also applied and obtained 15 Japanese and international patents, including 3 US patents. Prof. Chen serves as technology committee member of IEEE ICEPT from 2020, and serves as the committee member of Kansai branch of the Japanese Electronics Packaging Society from 2020, and also a committee member of International standardization for the third-generation semiconductor packaging substrate material, interconnections, heat conduction evaluation system and equipment in Japan from 2018.
Speech Description:
SiC and GaN have a wider band gap than Si, and they are able to withstand both high-temperature and high-frequency operation. The SiC and GaN can reduce power loss and overall downsize the power electrical equipment. Operation temperature of SiC power modules may achieve above 250℃ due to higher power application. Silver (Ag) sinter joining is becoming an important interconnection technology for die attach in power electronics. It exhibits superior process ability, high-temperature resistance and long-time durability to traditional connection methods such as solder joining or conductive adhesive joining. Massive works have demonstrated Ag sinter paste is capable to achieve a robust and reliable die attach on DBC substrate under a mild sintering condition (pressure-less, low temperature and atmospheric sintering). However, Ag sinter joining is also facing some huge issues, for example, high price especially for the Nano-Ag paste, excessive interfacial stress and reliability problems caused by the large mismatch of CTE (thermal expansion coefficient) between SiC, and the problem of coarsening of microstructure of sintered Ag paste caused by thermal migration during high temperature. In this presentation, we will summary the Ag sinter joining and propose some new die attach technologies to achieve for the low material cost and high reliability in high temperature of SiC power modules.
Die attach technologies such as Cu sinter joining, Ag-Si composite sintering, and Ag-Cu composite sintering will be introduced for the high temperature application with a properties of low-cost, low-CTE and high reliability.
The bonding quality and bonding mechanism will be also introduced for a comprehensive understanding of SiC power modules beyond Ag sinter joining.
Outline:
a. The background of SiC power modules and required die attach materials
b. Ag sinter joining technology and its reliability issues
c. Development of Cu sinter joining technology and apply for SiC power modules
d. Emerging Cu-Ag sinter joining technology for bare Cu in air condition sintering
e. Low-cost low-CTE and high reliability Ag-Si composite paste